A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator

Bahniman Ghosh, Rik Dey, Leonard F. Register, Sanjay K. Banerjee

    Research output: Contribution to journalArticle

    Abstract

    We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, (Formula presented.). The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on its top surface. When current is passed on the surface of (Formula presented.), the surface of the (Formula presented.) becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the (Formula presented.). Part of the current is also shunted through the ferromagnet, which generates spin transfer torque in the ferromagnet. The exchange interaction torque along with voltage-controlled magnetic anisotropy allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.88fJ for a ferromagnetic bit with thermal stability of (Formula presented.). Such ultralow-energy and high-speed switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design.

    LanguageEnglish (US)
    Pages1-7
    Number of pages7
    JournalJournal of Computational Electronics
    DOIs
    StateAccepted/In press - Jan 9 2017

    Fingerprint

    Ferromagnet
    Insulator
    Perpendicular
    Anisotropy
    Voltage
    insulators
    Simulation Study
    anisotropy
    Exchange interactions
    Electric potential
    electric potential
    Energy
    Exchange Interaction
    Torque
    simulation
    torque
    Data storage equipment
    energy
    Electrons
    Magnetic anisotropy

    Keywords

    • Exchange interaction
    • Micromagnetic simulation
    • Spin transfer torque (STT )
    • Topological insulator (TI )
    • Voltage-controlled magnetic anisotropy (VCMA )

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Modeling and Simulation
    • Electrical and Electronic Engineering

    Cite this

    A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator. / Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.

    In: Journal of Computational Electronics, 09.01.2017, p. 1-7.

    Research output: Contribution to journalArticle

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    abstract = "We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, (Formula presented.). The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on its top surface. When current is passed on the surface of (Formula presented.), the surface of the (Formula presented.) becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the (Formula presented.). Part of the current is also shunted through the ferromagnet, which generates spin transfer torque in the ferromagnet. The exchange interaction torque along with voltage-controlled magnetic anisotropy allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.88fJ for a ferromagnetic bit with thermal stability of (Formula presented.). Such ultralow-energy and high-speed switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design.",
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