Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Tanmoy Pramanik, Anupam Roy, Rik Dey, Amritesh Rai, Samaresh Guchhait, Hema C.P. Movva, Cheng Chih Hsieh, Sanjay K. Banerjee

Research output: Research - peer-reviewArticle

Abstract

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

LanguageEnglish (US)
Pages72-77
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume437
DOIs
StatePublished - Sep 1 2017

Fingerprint

Magnetization reversal
Magnetic anisotropy
Chromium
Thin films
tellurides
chromium
magnetization
anisotropy
thin films
Magnetoresistance
Molecular beam epitaxy
Anisotropy
Nucleation
Defects
molecular beam epitaxy
nucleation
defects
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy. / Pramanik, Tanmoy; Roy, Anupam; Dey, Rik; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng Chih; Banerjee, Sanjay K.

In: Journal of Magnetism and Magnetic Materials, Vol. 437, 01.09.2017, p. 72-77.

Research output: Research - peer-reviewArticle

Pramanik, Tanmoy ; Roy, Anupam ; Dey, Rik ; Rai, Amritesh ; Guchhait, Samaresh ; Movva, Hema C.P. ; Hsieh, Cheng Chih ; Banerjee, Sanjay K./ Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy. In: Journal of Magnetism and Magnetic Materials. 2017 ; Vol. 437. pp. 72-77
@article{00050d1d4ef74b6694b9ae479424d9c1,
title = "Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy",
abstract = "We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.",
author = "Tanmoy Pramanik and Anupam Roy and Rik Dey and Amritesh Rai and Samaresh Guchhait and Movva, {Hema C.P.} and Hsieh, {Cheng Chih} and Banerjee, {Sanjay K.}",
year = "2017",
month = "9",
doi = "10.1016/j.jmmm.2017.04.039",
volume = "437",
pages = "72--77",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

TY - JOUR

T1 - Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

AU - Pramanik,Tanmoy

AU - Roy,Anupam

AU - Dey,Rik

AU - Rai,Amritesh

AU - Guchhait,Samaresh

AU - Movva,Hema C.P.

AU - Hsieh,Cheng Chih

AU - Banerjee,Sanjay K.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

AB - We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

UR - http://www.scopus.com/inward/record.url?scp=85018267809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018267809&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2017.04.039

DO - 10.1016/j.jmmm.2017.04.039

M3 - Article

VL - 437

SP - 72

EP - 77

JO - Journal of Magnetism and Magnetic Materials

T2 - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -